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          Data Sheet www.rohm.com ? 2011 ROHM Co., Ltd. All rights reserved. Fast Recovery Diode RF101L2S ?Applications ?Dimensions (Unit : mm) General rectification ?Features 1)Small power mold type. (PMDS) 2)Ultra low VF 3)Ultra high switching speed 4)Low switching loss ?Construction Silicon epitaxial ?Structure ?Taping dimensions (Unit : mm) ?Absolute maximum ratings (Ta=25°C) Parameter LimitsSymbol Unit Reverse voltage (repetitive) 200VRM V Reverse voltage (DC) 200VR V Average rectified forward current (*1) 1Io A IFSM A Junction temperature 150Tj °C Tstg °C?55 to ?150 ?Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - 0.815 0.87 V IF=1.0A IR - 0.01 10 μAVR=200V Reverse recovery time trr - 12 25 ns IF=0.5A,IR=1A,Irr=0.25*IR Reverse current ?Land size figure (Unit : mm) Storage temperature (*1)Mounted on epoxy board. 180°Half sine wave Parameter Forward current surge peak (60Hz?1cyc) 20 PMDS 2.0 4.2 2.0 4.0±0.1 2.9±0.1 2.0±0.05 4.0±0.1 φ1.55±0.05 5.5±0.05 1.75±0.1 12±0.2 φ1.55 9.5±0.1 0.3 5.3±0.1 0.05 2.8MAX ROHM : PMDS JEDEC : SOD-106 ① Manufacture date ② ① ② 6 6 0.1±0.02 0.1 2.6±0.2 2.0±0.2 5.0±0.3 1.2±0.3 4.5±0.2 1.5±0.2 1/3 2011.05 - Rev.B |